Citation
Abstract
The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high-electron-mobility-transistor (HEMT) amplifier are presented here. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHRO2FH). At a physical temperature of 12 K the amplifier achieves noise temperatures between 3 and 6 K over the 1- to 2-GHz band. The associated gain is approximately 20 dB.
Details
- Volume
- 42-106
- Published
- August 15, 1991
- Pages
- 52–59
- File Size
- 314.7 KB