Citation
Abstract
We have examined the cryogenic DC behavior of 80-micrometer-gate-width devices from the “Cryo3/AZ1” wafer lot. Our measurements indicate that transistors from all five wafers have good “quality of pinch-off.” The gate-source leakage current and excess gate current have been investigated. All measured devices exhibited memory in the bias behavior at cryogenic temperatures. Illumination of the devices tends to make them more well-behaved. The effect of voltage stress and light on the turn-on voltage of a device from the -041 wafer has been investigated. A weak persistence of the effect of bias stress is also observed.
Keywords
high electron mobility transistor devices
cryogenic dc behavior
Cryo3/AZ1
gate source leakage current
excess gate current
Details
- Volume
- 42-169
- Published
- May 15, 2007
- Pages
- 1–26
- File Size
- 2.4 MB