Citation
Abstract
One of the advantages of semiconductor injection lasers is their potentially high power conversion efficiency. A device model and analysis of the power efficiency is presented and its dependence on the various device parameters such as length, mirror reflectivity, absorption coefficient and material conductivity is explained. Although the actual values of parameters used pertain to lasers fabricated from the AlGaAs system, the theoretical analysis is also relevant to semiconductor injection lasers of other atomic systems.
Details
- Volume
- 42-66
- Published
- December 15, 1981
- Pages
- 94–100
- File Size
- 489.9 KB