Citation
Abstract
New low-noise cryogenic input transmission lines have been developed for the DSN at 1.668 GHz and 2.25 GHz for cryogenically cooled Field Effect Transistor (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmussion line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.
Details
- Volume
- 42-91
- Published
- November 15, 1987
- Pages
- 89–93
- File Size
- 211.8 KB