Citation
Abstract
This article describes an experiment to measure the physical temperature of the active region of indium phosphide high-electron mobility transistors (HEMTs) while varying the chip temperature from 15 K to 50 K. The Pospieszalski HEMT device noise model predicts that the device noise temperature is dependent on the square root of the device-gate physical temperature. For this experiment the threeterminal HEMT device was separated into 2 two-terminal devices. One device was used as a heating element while the other served as a temperature-sensing element. The results indicate that the active device region is close to the chip ambient temperature.
Keywords
HEMT
cryogenically cooled indium phosphide HEMT
high-electron mobility transistor
Details
- Volume
- 42-170
- Published
- August 15, 2007
- Pages
- 1–9
- File Size
- 374.3 KB