Citation
Abstract
A voltage-controlled 8415-MHz FET oscillator stabilized. by a dielectric resonator is described. The oscillator provides a linear electronic tuning range of over 3.2 MHz witha flat power output equal to +1.8 dBm (27°C nominal), a single-sideband noise to carrier ratio of -68 dBc/Hz at 1 kHz off carrier, and a frequency temperature coefficient of 0.54 part per million °C over a -24°C to 75°C range. The oscillator withstood 150 krads (Si) of gamma radiation with no significant performance degradation. The overall performance of the FET oscillator is in many ways far superior to that of an equivalent bipolar oscillator for space applications.
Details
- Volume
- 42-93
- Published
- May 15, 1988
- Pages
- 292–301
- File Size
- 493.7 KB